ESR and FT-IR Studies on GeO2 Substituted Lead Vanadate Semiconducting Glass System

ESR and FT-IR Studies on GeO2 Substituted Lead Vanadate Semiconducting Glass System

Journal

Subject and more

  • LCC Subject Category: Materials Science, Architecture, Engineering, Manufacturing Technology, Environmental Protection, Biomaterials, Civil Engineering
  • Publisher's keywords: XRD, DSC, FT-IR, ESR, Semiconducting Glasses
  • Language of fulltext: english
  • Full-text formats available: PDF

AUTHORS

    P. Tejeswara Rao

EDITORIAL INFORMATION

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ABSTRACT

A series of Germania-lead-vanadium pentoxide glasses with x=5, 10 and 15 mol% were prepared by melt quenching technique and they were characterized by X-ray diffraction (XRD), Differential scanning calorimetry (DSC), Fourier Transform Infrared (FT-IR) and Electron Spin Resonance(ESR) techniques. X-ray diffraction results reveal that all samples are perfect amorphous in nature. Differential scanning calorimetry results indicate that the substituent GeO2 is replacing PbO in the glass network in such a way that the eutectic composition is maintained. The Fourier Transform Infrared spectra characterized V=O stretching frequency around 968 cm−1 upto 15 mole% and interestingly the Electron Spin Resonance studies did not yield well resolved hyperfine structure due to exchange broadening which varyies with nature of dopant. The Hruby parameter (Kg) for this glass system has been evaluated and reported.

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