HETEROLAYERS OF ANISOTROPIC Α-ZNSE FOR PHOTOSENSORS
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2018, Vol 15, Issue 2
Abstract
The optical, luminescence and electrical properties of α-ZnSe heterolayers obtained by the method of isovalent replacement are investigated. The high quantum yield of luminescence η = 10-12% in the short-wave region is established. The dominant role of excitons annihilation and interband transitions of free charge carriers is revealed. The surface-barrier structures of Ni-α-ZnSe, whose spectral region of photosensitivity is ħω = 2.70-3.75 eV, was made. The hexagonal modification of the structure of the obtained heterolayers causes their polarization properties of reflection and photosensitivity.
Authors and Affiliations
M. M. Slyotov, V. V. Melnyk, O. M. Slyotov
Keywords
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- EP ID EP399946
- DOI 10.18524/1815-7459.2018.2.136885
- Views 54
- Downloads 0
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