Capacitance–frequency(C-V–f) and conductance–frequency (G-V–f) characteristics of Au/n-GaN free standing Schottky structure Journal title: Journal of New technology and Materials Authors: H. Mazari, K. Ameur, R. Khelifi, S. Mansouri, N. Benseddik, Z. Benamara, A. Boumesjed, P. Marie, I.... Subject(s): Technology, Chemical sciences, Physical sciences
