DEVELOPMENT OF MATHEMATICAL MODEL OF CONTACT METAL-POROUS GALLIUM ARSENIDE WITH A SCHOTTKY BARRIER Journal title: Вісник Кременчуцького національного університету імені Михайла Остроградського Authors: А. Oksanich, S. Pritchin, М. Kogdas Subject(s):
FORMATION OF THE MECHANISM OF PHOTO-SENSITIVE STRUCTURES WITH BARRIERS OF METAL SEMICONDUCTOR IN PHOTODIODIC AND PHOTOVOLTATIC MODE Journal title: World Journal of Engineering Research and Technology Authors: Feruza Giyasova Subject(s):
The influence of the metal microstructure on the breakdown mechanism of Schottky diodes Journal title: Materials Physics and Chemistry Authors: Sh.G.Askerov, M.G.Gasanov, L.KAbdullayeva Subject(s): Chemistry, Physics, Mechanics, Materials Science, Biomaterials, Polymer Science
Exploring Terahertz COMPLEMENTARY METAL OXIDE SEMICONDUCTOR Integrated Circuits: Advancements and Obstacles Journal title: International Journal of Multidisciplinary Research and Analysis Authors: Abbas b NOORI Subject(s): Biological Sciences, Economics, Education, Engineering, Mathematics, Social Sciences, Technological Change, Health science
