1/f noise study as a non-destructive test to check MOSFET
Journal Title: IOSR Journals (IOSR Journal of Electrical and Electronics Engineering) - Year 2018, Vol 13, Issue 1
Abstract
1/f noise studies play significant role in choosing the band of frequency in which a device can be commendably used. This property is used to check the MOSFET without disturbing its physical structure. A MOSFET is used for intensifying or swapping electronic signals since it is a semiconductor gadget and also helps the electronic devices to run at a high capacity than they would otherwise. This particular device allows for parallel currents to distribute their power. In the present paper1/f noise and nonlinear effects in MOSFETs IRF 340, IRF 440 and IRF 640 are studied. The MOSFETs IRF 440 and IRF 640 show quite a large deviation compared to 1/f line in the lower frequency region while IRF 340 1/f nature matches it at low frequency.
Authors and Affiliations
P. Ananda, S. Victor Vedanayakam, K. Thyagarajan, N. Vijaya Lakshmi
Keywords
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- EP ID EP388558
- DOI 10.9790/1676-1301017985.
- Views 123
- Downloads 0
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