4x4 Compact Array with One Transistor One Memristor Memory Element
Journal Title: International Journal of Computational Engineering and Management IJCEM - Year 2016, Vol 19, Issue 1
Abstract
Customary memories are facing acute design problems due to gradual scaling of CMOS technology. There is a great need of superseding the conventional memories by a device that could fulfil the emerging need of high density device and low power consuming memory designs (array) that are capable of delivering the prerequisite of any memory design to store data and instructions. Memristor is a device that can supersede the conventional CMOS based cell. It is a two terminal non-volatile multi-purpose device. Memristor can store input/output value, perform logic operations, can act as a switch, latch or flip flop. This paper concentrates on the working of Memristor and designing 4x4 Memristor based array (1T1M) and thus highlights the advantages of using Memristor and 1T1M(one transistor one memristor) array. Memristor used in this paper has been implemented with Verilog–A model in cadence virtuoso tool at 45nm technology. The average transient power was found to be 8.148 nW at 0.3V which shows that by employing Memristors, minimum voltage at which array is capable of retaining data is 0.3V.
Authors and Affiliations
Shalini Singh, Shyam Akashe
Keywords
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