A COMPARISON STUDY OF THE FEATURES OF DC/DC SYSTEMS WITH SI IGBT AND SIC MOSFET TRANSISTORS
Journal Title: Informatyka Automatyka Pomiary w Gospodarce i Ochronie Środowiska - Year 2018, Vol 8, Issue 2
Abstract
This paper presents a comparison of the efficiency of two bidirectional DC/DC converters based on dual H-bridge topology. Tested converters were built using Si-based IGBT transistors and SiC-based MOSFETs. The results of the research are efficiency characteristics, taken from tests at the frequency range of 10÷60 kHz. Analysis of the results points to a massive advantage of the SiC-based design over the Si-based one.<br/><br/>
Authors and Affiliations
Karol Fatyga, Łukasz Kwaśny, Bartłomiej Stefańczak
Keywords
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- EP ID EP346450
- DOI 10.5604/01.3001.0012.0715
- Views 97
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