A Reconfigurable High Speed Dedicated BISR Scheme for Repair Intra Cell Faults in Memories.

Abstract

Shrinking process technology has the advantage of lower area of Integrated Circuits (I.C s). This has allowed adding more hardware (features) to existing circuits and enhancing the existing features, Example: - adding more cores to a micro-processor or increasing the resolution of the Video processing hardware of a mobile phone, etc. Execution of complex algorithms need more local memories (SRAMs) embedded in the hardware. As memories are densely packed structures compared to logic (gates and flip flops) the probability of fault occurrence in memories is higher. Thus, adding more complex logic has increased the probability of fault occurrence in ICs and thus decreasing the yield. In this paper we present a Reconfigurable Built in Self Repair (Re-BISR) technique to repair the faults in embedded memories. We also employ Error Correction Codes (ECC) to repair single bit faults in memories. Both the above techniques combined allow us to repair the faults and thereby increasing the yield and reliability of an IC. Re-BISR can repair the faults of several memories in an IC and thus has lesser hardware overhead compared to a dedicated BISR scheme where each RAM has a dedicated BISR module. However, Re-BISR is considerably slower compared to dedicate BISR as RE-BISR operates serially on each memory. Future version of Re-BISR contains a programmable MBIST scheme to accommodate several March algorithms and also include virtual blocks for redundant memories to increase the repair rate. We implement the project using Xilinx ISE tool for simulation and synthesis and the code is written in Verilog HDL. Amgoth Srinivas | Dr. A. Balaji Nehru | Ms V. Sumathi"A Reconfigurable High Speed Dedicated BISR Scheme for Repair Intra Cell Faults in Memories." Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-1 , December 2017, URL: http://www.ijtsrd.com/papers/ijtsrd7054.pdf http://www.ijtsrd.com/engineering/electronics-and-communication-engineering/7054/a-reconfigurable-high-speed-dedicated-bisr-scheme-for-repair-intra-cell-faults-in-memories/amgoth-srinivas

Authors and Affiliations

Keywords

Related Articles

Support Network of Visually Challenged Women in Tiruchirappalli City, Tamil Nadu

This study aimed to identify the support network especially family support system of visually challenged women. Women with visually challenged is one of the greatest a significant social issue globally. The family suppor...

Analysis of Belt Bucket Elevator

This paper describes the analysis of belt bucket elevator used in Myanmar C.P Livestock Co.Ltd Taunggyi feed mill . Material handling process is essential for the production. Bucket elevator has evolved as advanced mater...

Phrase Structure Identification and Classification of Sentences using Deep Learning

Phrase structure is the arrangement of words in a specific order based on the constraints of a specified language. This arrangement is based on some phrase structure rules which are according to the productions in contex...

The Queue Length of a GI M 1 Queue with Set Up Period and Bernoulli Working Vacation Interruption

Consider a GI M 1 queue with set up period and working vacations. During the working vacation period, customers can be served at a lower rate, if there are customers at a service completion instant, the vacation can be i...

A Study on the Mental Health and Self Confidence of B.Ed Students in Coimbatore District

India is a very fast developing country of the world. After independence, it has recorded a remarkable progress in every field of life. In this train of progress, the role of education cannot be avoided. Since impendence...

Download PDF file
  • EP ID EP358768
  • DOI -
  • Views 66
  • Downloads 0

How To Cite

(2017). A Reconfigurable High Speed Dedicated BISR Scheme for Repair Intra Cell Faults in Memories.. International Journal of Trend in Scientific Research and Development, 2(1), -. https://europub.co.uk/articles/-A-358768