A REVIEW OF DUAL MATERIAL GATE SOI MOSFET
Journal Title: World Journal of Engineering Research and Technology - Year 2017, Vol 3, Issue 4
Abstract
Digital electronics are pervasively across the globe today. Enriching people life and making communication and sharing easier than ever. At the heart of each digital device is semiconductor chips. Each chip is made of billions of transistor the building blocks of digital world. To build better digital devices and enhance the user experience the size of transistor must be reduced while increasing performance and reducing power consumption. Classical scaling is no longer to follow Moore’s law. SOI is an advanced technology designed to operate at low power. With this a new technique called dual material gate is used to improve the performance of the MOSFET by reducing short channel effects such as DIBL, Channel Length Modulation and Hot carrier effects. This paper presents review of Dual Material Gate SOI MOSFET.
Authors and Affiliations
Monika Joshi
Keywords
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