ABOUT PERFORMANCE LINEARITY OF THE ENVIRONMENT GAS HUMIDITY CAPACITIVE SENSORS BASED ON SILICON MOS STRUCTURES WITH A NANODIMENSIONAL SILICON OXIDE
Journal Title: Сенсорна електроніка і мікросистемні технології - Year 2015, Vol 12, Issue 4
Abstract
The purpose of this work is to establish the reason for the performance linearity of the environment gas humidity capacitive sensors, based on silicon MOS structures with a nanodimensional silicon oxide being in depletion or weak inversion modes. Sensor’s samples to be studied were made on the base of humidity sensitive Mо-SiO2-NN+Si(111) structures with a donor concentration of Nd = 2∙1021 м-3 in the N-type silicon layer. An oxide with a thickness of ~ 5 nm was formed by oxidation of the initial silicon epitaxial wafer in air. The capacitance of the samples was measured using a commercial alternating – current bridge at a frequency of 1MHz. During the course of studies, the samples were located in a laboratory humidity chamber, in which it was possible to vary the relative air humidity from 10 to 100 %. Based on the analytically established connection between the measured capacity and the structure parameters, as well as the connection between these parameters and the relative environmental gas humidity, the experimentally observed performance linearity is theoretically grounded. The obtained expression for the performance calculation adequately describes the experimental dependences. It is demonstrated that the performance linearity is caused by the linearity of the structure’s surface potential change on humidity, while the linearity of the surface potential change is determined by both, the structure parameters and the linearity of the change in surface states density, induced by water molecules near the silicon – oxide interface.
Authors and Affiliations
P. P. Fastykovsky, M. A. Glauberman
Keywords
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- EP ID EP399300
- DOI 10.18524/1815-7459.2015.4.107793
- Views 80
- Downloads 0
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