Analysis of CNTFET Based Circuit Performance over CMOS in Inverter and OPAMP

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Analysis of CNTFET Based Circuit Performance over CMOS in Inverter and OPAMP

Journal Title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) - Year 2015, Vol 3, Issue 5

Abstract

Carbon nanotubes (CNTs) exhibit high current handling capability, higher thermal and electrical conductivity and higher transport properties, presently the Carbon nanotube technology are be the best competitor and alternative of conventionally used Complementary metal oxide semiconductor technology(CMOS). In this paper, CNT based field effect transistors known as CNTFET is compared with the conventionally used silicon based technology MOSFETs on the basis of circuit level performance. Those two technologies are compared with simulation work performed on logic families such as inverter and non inverting OPAMP on different predefined parameters such as power delay product, power dissipation, input output resistance, gain, phase margin, slew rate and power delay. We used minimum gate length of 32nm for both MOSFET and CNTFET. The results of simulation conclude that in CNTFET based logic gates, power consumption and delay is about 10times lower, leakage is reduced to 100% compared to the MOSFET based devices such as inverter. These excellent performances characteristics with different variations are also exhibit excellent robustness.

Authors and Affiliations

Mohammad Farhan

Keywords

EP ID EP20631
DOI -
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