APPLICATION OF NON-METAL DOPED TITANIUM DIOXIDE IN PHOTOVOLTAIC CELLS
Journal Title: Proceedings of Electrotechnical Institute Prace Instytutu Elektrotechniki - Year 2012, Vol 59, Issue 259
Abstract
New photoactive materials are of particular importance in studies on the third generation of photovoltaic cells. In the case of two such devices: dye sensitized solar cells (DSSC) [1] or inverted organic photovoltaic cells (I-PV) [2] titanium dioxide plays very important role. There are proposed application of titanium dioxide doped with sulfur (S-TiO2), nitrogen (N-TiO2) and iodine (I-TiO2) [3] – materials that have a narrower bandgap energy than pure titania and exhibit photoactivity under visible light. Doped titania dioxide was used as a thin buffer layer (100 nm) in inverted organic cells and as a porous layer (3 µm) in dye sensitized solar cells. The application of N-TiO2 and I-TiO2 in I-PV, leads to the higher photoconversion efficiency of radiation energy into electricity (PCE = 1.67% and 1.20%, respectively) in comparison to cells when buffer layer is made of pure titanium dioxide (PCE = 1.00%). Moreover, for devices with doped TiO2 there is observed greater stability, which is manifested as maintenance of photovoltaic parameters values (Voc, ISC, FF, PCE) for the longest period of time. For DSSC cells with configuration: FTO/X-TiO2/N3/ elektrolyte/Pt/FTO (X – dopant atom, N3 – a standard, commercially available dye), in which the only variable was the type of anode material, the highest efficiency was obtained for I-TiO2 (3.23%) and S-TiO2 (2.95%), and PCE for the device with a layer of pure TiO2 was 1.69%.
Authors and Affiliations
Katarzyna SIUZDAK, Laurence VIGNAU, Anna LISOWSKA-OLEKSIAK
Keywords
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