Band Offsets at the Interface of 4H-SiC/SiO2
Journal Title: Applied Sciences Research Periodicals (ASRP) - Year 2025, Vol 3, Issue 2
Abstract
The author through this brief communication wishes to publicize the findings of the band offsets at the Si-faced 4H-SiC/SiO2 interface through an intense and focused research in the area of Metal-Insulator-Semiconductor (MIS) characterization in an academic environment, since the starting of his Ph.D. in 1989 to eight years work from home from March 2017 to February 2025, a total of over 35 years.
Authors and Affiliations
Ravi Kumar Chanana
Keywords
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