Calculation of the Second EXAFS Cumulant of Si Using the Anharmonic Correlated Einstein Model
Journal Title: Engineering and Technology Journal - Year 2024, Vol 9, Issue 08
Abstract
The second expanded X-ray absorption fine structure (EXAFS) cumulant of the crystalline silicon (Si) has been studied in the temperature-dependent. This is calculated in explicit forms using the anharmonic correlated Einstein (ACE) model developed from the correlated Einstein model based on the anharmonic effective potential and the quantum statistical theory. The numerical results of Si in the temperature range from 0 to 1200 K are in good agreement with those obtained by the other theoretical models and experiments at several temperatures. The analytical results show that the ACE model is suitable for analyzing the experimental EXAFS data of diamond cubics.
Authors and Affiliations
Tran Thi Huyen Giang , Do Ngoc Bich , Vu Thi Kim Lien,
Keywords
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- EP ID EP741577
- DOI 10.47191/etj/v9i08.04
- Views 45
- Downloads 0
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