Carbon Nanotubes Field Effect Transistor: A Review
Journal Title: International Journal of Science and Research (IJSR) - Year 2015, Vol 4, Issue 3
Abstract
"In this paper we have focused on the carbon nano tube field effect transistor technology. The advantages of CNTFET over MOS technology are also discussed. The structure and types of CNTFET are given in detail along with the variation of threshold voltage with respect to the alteration in CNT diameter. The characteristics curve between gate to source current and drain to source voltage is plotted. Various fixed and variable parameters of CNT are also focused. "
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- EP ID EP357643
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