Characteristics of ZnO-based semiconductor ceramics doped with GeO2 and PbO

Journal Title: International Journal of Science and Research (IJSR) - Year 2015, Vol 4, Issue 2

Abstract

The effect of GeO2 and PbO on physical, microstructure, and the electrical properties of ZnO based ceramics is investigated. A decrease in water absorption was recorded with rise in maturing temperature and increase in time of soaking. A minimum water absorption was displayed in specimens fired at 1000 oC for 2 hours. The average grain size decreases initially as GeO2 content increases up to 2 mol %. The grain size of ZnO decreases greatly, as the Ge-rich phase inhibits grain growth ZnO decreases. The decrease of capacitance in (pf), dielectric constant (ε-) and consequently increase (AC) conductivity with increasing frequency (1-20) KHz was investigated.

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  • EP ID EP355252
  • DOI -
  • Views 67
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How To Cite

(2015). Characteristics of ZnO-based semiconductor ceramics doped with GeO2 and PbO. International Journal of Science and Research (IJSR), 4(2), -. https://europub.co.uk/articles/-A-355252