Chemical and Mechanical Polishing of Cd1-xMnxTe by Solutions Based on H2O2–HI–Citric Acid
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
UThe process of chemical and mechanical polishing CdTe and Cd1-xMnxTe (0.3 <x <0.5) solid solutions by the solutions HI–H2O2–citric acid has been established. There is investigated the influence of the nature of the viscous component on the etching rate and quality of the polished surface single crystals. It is shown that at the dissolving by the basic polishing etchant with organic solvents (lactic acid, ethylene glycol or glycerol) surfaces of the studied crystals with high quality have been formed. It is found that by slowest etching rate of the chemical mechanical polishing are characterized the solvents with lactic acid, and the polishing quality improves with increasing kinematic viscosity of the organic solvent. Profilografy and microstructure analyzes examined the condition of the polished surface and defined their roughness after polishing (Rz ≤ 50 nm).
Authors and Affiliations
R. O. Denysyuk
Keywords
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