Clusters of Atoms of Copper and Irridium and Their Influence on Recombination Properties of Silicon

Abstract

The types and nature of structural defects of n-type silicon with clusters of impurity atoms of copper and iridium were determined by the method of non-stationary capacitive spectroscopy (DLTS), measurements of the resistivity, concentration and lifetime of charge carriers, as well as using infrared and atomic force microscopes Solver-NEXT. It was found that after hightemperature diffusion, star-shaped defects are observed in rapidly cooled Si <Cu> samples, while in rapidly cooled Si <Ir> samples they are subsequently embedded in a chain and in the form of a needle, and in both slowly cooled samples, only roundshaped inclusions are formed, however, the density is low. The absence of dislocation decoration in slowly cooled Si <Cu> and Si <Ir> samples is associated with the formation of point defects of the [Cu – O] type, [Cu – Si] silicides, and pairs of Cui [Cus – Cui] and Iri [Irs – Iri] atoms. An increase in the lifetime of charge carriers caused by the formation of an adhesion level associated with the [Cu – O] complex in silicon.

Authors and Affiliations

Sherzod Axmadovich Mahmudov, Johongir Zokirjonovich Mirzaraimov, Avaz Karimjonovich Rafikov

Keywords

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  • EP ID EP689145
  • DOI DOI: 10.47191/ijmra/v3-i9-04
  • Views 113
  • Downloads 0

How To Cite

Sherzod Axmadovich Mahmudov, Johongir Zokirjonovich Mirzaraimov, Avaz Karimjonovich Rafikov (2020). Clusters of Atoms of Copper and Irridium and Their Influence on Recombination Properties of Silicon. International Journal of Multidisciplinary Research and Analysis, 3(09), -. https://europub.co.uk/articles/-A-689145