Comparative Study Between Different Metal Gates Engineered Structures
Journal Title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) - Year 2017, Vol 5, Issue 6
Abstract
In this paper, comparative study between different metal gate structures has been presented. Short channel effect acts as barrier for further reduction in size of conventional MOSFETs. So looking for new device structures with different materials and property. But this alone cannot help us to catch up the ITRS roadmap. To achieve this, proportional decrease in oxide thickness are required. But SCEs are come into the picture again and degrade the device performance. So introduced the concept of dual dielectric along with different metal gate and this concept enhance the performance of device. The comparisons between devices are carried out by using surface potential and electric field parameters. The triple metal dual dielectric cylindrical gate all around MOSFETs are the best device among all. The comparisons are carried out with the help of MATLAB.
Authors and Affiliations
L. M. Gupta, Neeraj Gupta
Keywords
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