Comparative Study of Ion/Ioff Ratio of Silicon Nanowire Transistor (SNWT) with Planner MOSFET
Journal Title: Bulletin of Pure and Applied Sciences Sec. D – Physics - Year 2018, Vol 37, Issue 1
Abstract
In this paper, a general approach, that considers both electrostatic integrity and quantum confinement, so called the “EQ approach”, to compare the device performance of nanoscale Si FETs with various gate geometry configurations, i.e., planar MOSFETs versus SNWTs, is proposed. A better gate control, e.g., a better sub threshold swing and a higher ON-OFF current ratio is reported. This approach is based on the use of LQvs. LEplot, where LQ is the quantum confinement length, and LE denotes the electrostatic scale length.
Authors and Affiliations
Dr. Manish Mishra
Keywords
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- EP ID EP527419
- DOI 10.5958/2320-3218.2018.00001.5
- Views 186
- Downloads 0
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