Comparative Study of SiGe MOSFET with Single Substrate MOSFET Using Visual TCAD
Journal Title: International journal of Emerging Trends in Science and Technology - Year 2014, Vol 1, Issue 4
Abstract
A comparative study of SiGe based MOS transistor with single Si and Ge based MOS transistors has been investigated. The objective of this study is to analyze the performance of SiGe MOSFET which shows some significantly better electrical characteristics as compared to the silicon and Germanium channel MOSFET’s. Design, Simulation and analysis of transistors has been performed with the help of Visual TCAD.
Authors and Affiliations
Shekhar Srivastava
Keywords
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