Compensation Effect in the Kinetics of the Cd1-xMnxTe Solid Solution Chemical Etching
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 2
Abstract
The kinetics of the chemical dynamic polishing of CdTe and Cd1-xMnxTe (0,04< х <0,5) using iodine containing (I2–HI) and iodine emerging etchants based on Н2О2–НІ and the temperature dependence of the chemical dissolution have been investigated. Apparent activation energy and preexponential factor of the chemical polishing of the mention above semiconductor materials have been determined. The existence of the compensation effect at the chemical etching of CdTe and Cd1-xMnxTe solid solutions has been established using obtained experimental data. It was shown that the etchant solution influences on the compensation effect and the semiconductor materials does not influence on this effect.
Authors and Affiliations
R. O. Denysyuk
Keywords
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