Complementary Metal-Oxide Semiconductor: A Review

Journal Title: International Journal of Science and Research (IJSR) - Year 2015, Vol 4, Issue 4

Abstract

In this paper we have focused on the complementary metal-oxide semiconductor technology. This paper covers overview of power consumption sources and discusses the techniques for reduction of power dissipation in high performance designs. Power dissipation is very serious matter in CMOS technology. The first section contains introduction, second section contains review of CMOS, third section contains overview of power consumption sources and leakage current mechanisms, fourth section contains techniques to reduce power dissipation, and the last section presents the conclusion and references.

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  • EP ID EP364154
  • DOI -
  • Views 87
  • Downloads 0

How To Cite

(2015). Complementary Metal-Oxide Semiconductor: A Review. International Journal of Science and Research (IJSR), 4(4), -. https://europub.co.uk/articles/-A-364154