Content Addressable Memory for Multi Page Memory Interface
Journal Title: IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) - Year 2018, Vol 13, Issue 3
Abstract
content addressable memory (CAM) interface plays a major role in current applications, where the stored data are coded or processed for interfacing, reading and processing of stored data. In the process of memory interface, as the volume of data is increasing, the conventional single page memory interface are not suitable. Hence, to process over a large volume of data multi page memories are developed. Where, multi page memories are suitable for large volume storage, accessing of such memory is a complex task. In this paper, a new interface design to data interfacing on such memory unit is proposed. The design approach, gives a simpler modeling of data interfacing in content based addressable memory interfacing applications.
Authors and Affiliations
K. Suresh Kumar, Y. Rajasree Rao, K. Manjunathachari
Optimization and Alignment of Multiple Images to Construct a Panoramic Images
With The Prevalence Of Smart Phones, Sharing Photos Has Become Popular. Since Cameras Generally Have A Limited field Of View, Panoramic Shooting Mode Is Provided, Where The User Can Capture Images Under Guidance To Gener...
An innovative method for stitching the images for panoramic view
An image stitching method panorama gives serious issues with respect to distortion when collaborating long similar sequential images. To solve the distortion enhanced approach is proposed in this work, adding the alterat...
Content Addressable Memory for Multi Page Memory Interface
content addressable memory (CAM) interface plays a major role in current applications, where the stored data are coded or processed for interfacing, reading and processing of stored data. In the process of memory interfa...
Rice Grain Quality Grading Using Digital Image Processing Techniques
Quality of grain is of great importance for human beings as it directly impacts the human health. Hence there is a great need to measure a quality of grain and identifying adulteration or non-quality elements and analyzi...
Detached Sb-Based Crystal Growth by VDS: Fabrication and Characterization of the Schottky and MOS Devices on InSb VDS-Substrate Operate At 300k
In this research, Schottky Barrier diode (SBD) and MOS structure fabrication process on substrates (n-InSb, p-InSb) from the detached crystals grown by the vertical directional solidification (VDS) have been reported. An...