Crystal Defect Analysis Subsystem Alloyed and Annealed in a Layer of Selenium Crystals ZnSe:Mn
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 4
Abstract
Based on the proposed formulas for Crystal Doped Magnesium of n-ZnSe: Mn and p-ZnSe: Mn is calculated depending on the prevailing concentration of point defects, free-carrier concentration and Hall on the content of dopant Mn. Confirmed donor effect of manganese. It is shown that annealing of n-ZnSe: Mn in a couple of Se leads to a decrease in the concentration of electrons in crystals and p-ZnSe: Mn has been an increase in the major carriers.
Authors and Affiliations
D. M. Freik, M. P. Levkun, V. M. Boychuk, G. Y. Gurgula, L. D. Yurchyshyn
Keywords
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