DEEP LEVELS OF ZIRCONIUM IN SILICON AND SILICON STRUCTURES
Journal Title: World Journal of Engineering Research and Technology - Year 2017, Vol 3, Issue 6
Abstract
By means of methods transient capacitance spectroscopy of deep levels studied the formation of defects in silicon and silicon structures, doped Zirconium. Discovered that diffusive introduction of zirconium into the silicon leads to the formation of three deep levels with fixed ionization energies of Ec–0.22 eV, Ec–0.42 eV and Ev+0.30 eV, and dominate the last two levels. It is established that the efficiency of the formation of deep centers associated with the atoms of zirconium increases with temperature diffusion and the cooling rate after diffusion.
Authors and Affiliations
Dr. Shakhrukh Kh. Daliev
Keywords
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