DESIGN AND SIMULATION OF SUPER HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON GAN USING THE POLARIZATION JUNCTION CONCEPT
Journal Title: International Journal of Engineering Sciences & Research Technology - Year 30, Vol 5, Issue 6
Abstract
In GaN Based Super Hetreojunction Field Effect Transistors a 2 Dimensional Hole Gas (DHG) is formed in addition to the 2 Dimensional Electron Gas. The positive and negative charges due to the polarization nullify each other resulting in a flat electric field which enhances the characteristic of the device. The device is a depletion mode device with a threshold of -3V. The ION/IOFF of the device is 106.
Authors and Affiliations
Asad Suhail Farooqi
Keywords
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- EP ID EP112387
- DOI 10.5281/zenodo.54852
- Views 64
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