Design and Technological Aspects of SC Structures on Silicon Epitaxial Structures
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 1
Abstract
Investigated parameters and characteristics of CE structures made from silicon epitaxial structures. Presented system: activated boron or phosphorus silicon substrate and epitaxial layer, which coincides with the substrate by type conductivity.
Authors and Affiliations
S. P. Novosyadlyy, S. M. Marchuk, V. M. Varvaruk, L. V. Melnyk
Keywords
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