Design of A Low Power Dissipation Bandgap Voltage Reference Without Resistors

Abstract

With the development of portable electronics, low power dissipation have become the main direction of current chip research, because Bandgap Reference (BGR) circuits are widely used in modern LSIs to generate a reference voltage on chips, So this paper presents a low power and low temperature coefficient bandgap voltage reference that employs the proportional to absolute temperature (PTAT) voltage generator circuit based on overdrive voltage differences. The BGR circuit consists of MOSFET and bipolar transistor without resistors. The simulated results are verified by Cadence Spectre.The simulated results based on the Magnachip 0.18µm CMOS process demonstrate that the BGR’s temperature coefficient is 22.44ppm/℃ at a temperature range from -40℃ to 140℃ when power voltage is 0.95V. The PSRR is -50.4023dB at 100Hz, -13.2811dB at 10MHz, and the power dissipation at room temperature is only 83nW.

Authors and Affiliations

MingZhe Zhang

Keywords

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  • EP ID EP388552
  • DOI 10.9790/1676-1301016672.
  • Views 144
  • Downloads 0

How To Cite

MingZhe Zhang (2018). Design of A Low Power Dissipation Bandgap Voltage Reference Without Resistors. IOSR Journals (IOSR Journal of Electrical and Electronics Engineering), 13(1), 66-72. https://europub.co.uk/articles/-A-388552