Design of High Speed and Power Optimized Sense Amplifier using Deep Nano CMOS VLSI Technology
Journal Title: International Journal of Trend in Scientific Research and Development - Year 2020, Vol 4, Issue 6
Abstract
during this paper weve designed quicker and Power economical Sense electronic equipment for CMOS SRAM exploitation VLSI Technology i.e. primarily schematic of sense electronic equipment is intended and simulated exploitation ADS Advanced style System . The sense electronic equipment then enforced and analyzed at chip level exploitation Microwind three.1 a layout editor. The forty five nm and thirty two nm technologies are accustomed analyze performance of Sense electronic equipment. Our focuses are to scale back the scale, to enhance the ability consumption and additionally to enhance the time interval of sense electronic equipment. Mr. Chandrahas Sahu | Raja Jhariya "Design of High Speed & Power Optimized Sense Amplifier using Deep Nano CMOS VLSI Technology" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-4 | Issue-6 , October 2020, URL: https://www.ijtsrd.com/papers/ijtsrd35719.pdf Paper Url: https://www.ijtsrd.com/engineering/electrical-engineering/35719/design-of-high-speed-and-power-optimized-sense-amplifier-using-deep-nano-cmos-vlsi-technology/mr-chandrahas-sahu
Authors and Affiliations
Mr. Chandrahas Sahu
Keywords
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