Determination of reliability parameters of radioelectronic devices determined by thermal modes

Abstract

Statement of the problem. The reliability is important (and sometimes crucial) functional characteristic for RED. So it is necessary to analyze the impact on them of destabilizing external factors - mechanical, temperature, humidity, ionizing radiation. Structural-design elements RED. SCM are the main objects for which you first need to determine the temperature of the ЕЕS and performance reliability. Determination of the temperature of the EES cells and microassemblies. The basic mathematical models are presented to determine the temperatures of the electronic structure elements of cells and microassemblies. Indicators of HEE reliability as a function of their temperature. The value of the operational failure rate of most groups RED calculated by mathematical models. These indicators include: basic failure rate, the rate regime, the coefficients that take into account changes in operational failure rate depending on various factors. Software definition of reliability parameters. The software product allows you to switch from "manual" calculation reliability REDs to a fully automated modeling components. The program is applicable for calculating the reliability and to find a more "sustainable" elements to increase the probability of failure-free operation. Conclusions. Primary tasks performed in the work are listed

Authors and Affiliations

A. Nikitchuk, B. Uvarov

Keywords

Related Articles

Frequency selection module in composition the central station of reception and transmission multimedia information

The knot is incomposition the keystation of reception and transmission signals of ether television, radiosignals and multimedia information is presented in the article. The module of frequencyselection is intended for fi...

The Field Of Equivalent Some Numeral Methods

This paper describes some properties of methods for numeral solving partial differential equations. A number of identities are proved to show there are regions of equivalency for finite differences methods and finite ele...

Simulation of an operational amplifier based on MOS transistors

The analysis of model's parameters of MOS transistor was carried out; the job contains results of simulation of an operational amplifier.

The analysis of pulse waves of own vectors of the operator of differentiation in basis of transformations Wolsha-Hadamara

The opportunity and prospect of the analysis of signals of a pulse wave is shown in the field of orthogonal transformations, for which transformation are of an own vector of the discrete operator of differentiation.

Numerical optimization of coaxial-to-microstrip transition to feed a printed quasi-Yagi element of phased antenna arrays

Abstract. Paper presents numerical investigation of the coaxial-to-printed microstrip transition. Results were obtained by finite-difference time domain method. Rationale of the coaxial-to-microstrip transition type. Dif...

Download PDF file
  • EP ID EP308876
  • DOI 10.20535/RADAP.2014.57.92-103
  • Views 42
  • Downloads 0

How To Cite

A. Nikitchuk, B. Uvarov (2014). Determination of reliability parameters of radioelectronic devices determined by thermal modes. Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування, 0(57), 92-103. https://europub.co.uk/articles/-A-308876