Direct synthesized graphene-like film on SiO2: Mechanical and optical properties
Journal Title: Semiconductor Physics, Quantum Electronics and Optoelectronics - Year 2016, Vol 19, Issue 4
Abstract
Exploiting CVD technique for carbon deposition from C2H2+H2+N2 mixture, a graphene-like film synthesized directly on SiO2 surface of SiO2-Si structure was obtained. The graphene-like film was grown under thin Ni layer that is easy exfoliated from graphene-SiO2-Si structure. Surface of the film was sufficiently smooth and reveals no winkles and holes; it has a good homogeneity and perfect adhesion to SiO2 layer. Studying the micro-Raman spectra showed a graphene-like structure of the film; using atomic force microscopic technique, the thickness of film was determined (0.6 nm). Using spectroscopic ellipsometry and simple Cauchy model enabled us to estimate optical parameters of this graphene-like film.
Authors and Affiliations
E. G. Bortchagovsky, A. V. Vasin, P. M. Lytvyn, S. I. Tiagulskyi, A. M. Slobodyan, I. N. Verovsky, V. V. Strelchuk, Yu. Stubrov, A. N. Nazarov
Keywords
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- EP ID EP178300
- DOI 10.15407/spqeo19.04.328
- Views 81
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