DOPED SILICON WITH GALLIUM AND ANTIMUM IMPURITY ATOMS

Journal Title: International scientific journal Science and Innovation - Year 2023, Vol 2, Issue 5

Abstract

In this work, a mathematical model of the concentration distribution of gallium and antimony elements theoretically doped into silicon by diffusion method was studied using the MathCad program. The essence of theoretical calculations and mathematical modeling of the diffusion process is not to waste experiments, to determine in advance the depth of penetration of the impurity atoms into silicon from diffusion, and to plan the experiments and increase the productivity of the results.

Authors and Affiliations

Isakov Bobir Olimjonovich, Hamrokulov Shahzodbek Ikhtiyor ugli, Abdurakhmonov Samandar Abdusamad ugli, Abdurakhmonov Halimjon Abdusamad ugli

Keywords

Related Articles

EFFECTIVENESS OF TEACHING CHEMISTRY BASED ON A DIFFERENTIAL APPROACH IN VARIATIVE CLASSES

This paper investigates, using a novel technique, the efficiency of teaching chemistry. By examining the unique traits of every learner, the distinct strategy seeks to customize the learning process. The methodological u...

DIGITAL TECHNOLOGIES - DEVELOPMENT FACTOR IN PROFESSIONAL TRAINING OF FUTURE ENGINEERS

This article set the goal of studying the use of digital technologies in the higher education system of our republic, determining the priorities for the development of the educational process based on an analysis of thei...

STUDENTS’ CHALLENGES IN USING PASSIVE VOICE IN ESL/EFL WRITING

This study aimed to investigate the difficulties faced by English as a Second Language learners of A/Kallanchiyagama Arafa Muslim M. V (KAMMV) in using passive voice in EFL/ESL students’ written communication. The object...

TECHNOLOGY FOR THE DEVELOPMENT OF TECHNOLOGICAL COMPETENCE OF FUTURE PRIMARY SCHOOL TEACHERS ON THE BASIS OF STEAM EDUCATION

The article highlights the theoretical and practical importance of the development of technological competence of future primary school teachers on the basis of STEAM education. The essence of the content of technologies...

MATHEMATICAL MODELING OF DEFORMATION OF A PARABOLOID OF REVOLUTION IN A MAGNETIC FIELD

The development of science and new technologies poses more subtle, specific, and detailed requirements for solving technical and technological problems in various fields, such as mechanical engineering, instrument making...

Download PDF file
  • EP ID EP717307
  • DOI 10.5281/zenodo.7979273
  • Views 58
  • Downloads 0

How To Cite

Isakov Bobir Olimjonovich, Hamrokulov Shahzodbek Ikhtiyor ugli, Abdurakhmonov Samandar Abdusamad ugli, Abdurakhmonov Halimjon Abdusamad ugli (2023). DOPED SILICON WITH GALLIUM AND ANTIMUM IMPURITY ATOMS. International scientific journal Science and Innovation, 2(5), -. https://europub.co.uk/articles/-A-717307