DOPED SILICON WITH GALLIUM AND ANTIMUM IMPURITY ATOMS
Journal Title: International scientific journal Science and Innovation - Year 2023, Vol 2, Issue 5
Abstract
In this work, a mathematical model of the concentration distribution of gallium and antimony elements theoretically doped into silicon by diffusion method was studied using the MathCad program. The essence of theoretical calculations and mathematical modeling of the diffusion process is not to waste experiments, to determine in advance the depth of penetration of the impurity atoms into silicon from diffusion, and to plan the experiments and increase the productivity of the results.
Authors and Affiliations
Isakov Bobir Olimjonovich, Hamrokulov Shahzodbek Ikhtiyor ugli, Abdurakhmonov Samandar Abdusamad ugli, Abdurakhmonov Halimjon Abdusamad ugli
Keywords
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- EP ID EP717307
- DOI 10.5281/zenodo.7979273
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