Double Stacked Gates MOSFET Technology In both Planar as well as 3D Gate(Finfet) MOSFET’s
Journal Title: International Journal of Electronics Communication and Computer Technology - Year 2015, Vol 5, Issue 6
Abstract
This paper describes the performance of a planar mosfet as well as the performance of finfet mosfet when dual gate layers are used on the same side of the mosfet channel with separate gate oxide layers, thus providing excellent control over the channel current.
Authors and Affiliations
Jawaaz Ahmad| Department of Electronics and Communication Islamic University of Science and Technology Awantipora, India, Romana Yousuf| Department of Electronics and Communication Islamic University of Science and Technology Awantipora, India
Keywords
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- EP ID EP8446
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