Dynamic tensor properties of silicon with deep impurity levels
Journal Title: International Journal of Fundamental Physical Sciences - Year 2011, Vol 1, Issue 2
Abstract
The dynamical tensoproperties of simples Si <Ni>, Si <Gd>, Si <Au> and Si <Mn> at temperatures Т=293К and Т=273К are investigated. The strongly increasing of dynamical tensosensitivity these specified simples at speed of change of pressure P\t >108 Pa/s in comparison with their statistical tensosensitivities is shown.
Authors and Affiliations
Odiljon Mamatkarimov, Ulugbek Tuychiev, Ikromjon Tursunov, Rustamjon Khamidov
Keywords
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- EP ID EP598437
- DOI 10.14331/ijfps.2012.330010
- Views 115
- Downloads 0
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