EFFECT OF COHERENT AND INCOHERENT RADIATION ON SURFACE MORPHOLOGY OF SILICON NANO-STRUCTURE

Journal Title: Academic Research International - Year 2013, Vol 4, Issue 3

Abstract

In this work the effects of coherent radiation (Laser) and incoherent radiation (Halogen lamp) during the electrochemical etching process on the structural characteristics of n-type PSi samples were investigated. The porosity values were measured by depending on the microstructure analyses and Gravimetric measurements. Surface morphology, layer thickness, pore diameter, pore shape, wall thickness and etching rate were studied by depending on Scanning electronmicroscopic (SEM) images.

Authors and Affiliations

Ghaleb Abdul Wahab AL-Dahash

Keywords

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  • EP ID EP114968
  • DOI -
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How To Cite

Ghaleb Abdul Wahab AL-Dahash (2013). EFFECT OF COHERENT AND INCOHERENT RADIATION ON SURFACE MORPHOLOGY OF SILICON NANO-STRUCTURE. Academic Research International, 4(3), 18-23. https://europub.co.uk/articles/-A-114968