Effect of Parasitic Inductance on Inverter Module Performance
Journal Title: International Journal for Research in Applied Science and Engineering Technology (IJRASET) - Year 2015, Vol 3, Issue 5
Abstract
Effect of circuit parasitic inductance is an important consideration in application and characterization of Insulated Gate Bipolar Transistor Module (IGBT). Higher value of parasitic inductance causes higher voltage overshoot peak. This paper demonstrates how the performance of the half H-bridge IGBT inverter module is affected by it. Comparison of Vce(peak) values of IGBT modules having different Stray inductance is done for analysis purpose. Simulation results show the effectiveness of our approach.
Authors and Affiliations
Kathiriya Shrikantkumar Mithabhai, Vinod Patel
Keywords
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- EP ID EP20604
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