Effect of Temperature on Cu-doped p-ZnTe Thin-Films
Journal Title: JOURNAL OF ADVANCES IN PHYSICS - Year 0, Vol 10, Issue 1
Abstract
In this paper we study the effect of temperature in 150 (±5) and 80 (±5) nm p-ZnTe thin- films immersed in 60 mgCu(NO3)2-3H2O/150 ml (H2O) for 1 minute, and heated at 200 and 300 °C for 30 minutes. Active layers were deposited by pulsed-laser deposition (PLD) at room temperature. Electrical parameters in un-doped films were around 108 ?109 ? and these values decreased to ~ 103 ? when the films were immersed in a Cu solution. The Cu-doped samples heated at 300 °C showed a completely homogeneous doping. X-ray diffraction (XRD) patterns showed the orthorhombic structure at 200 and 300 °C.
Authors and Affiliations
G. Lastra, A. Olivas, J. I. MejÃa, M. A. Quevedo-López
Keywords
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- EP ID EP653723
- DOI 10.24297/jap.v10i1.1338
- Views 90
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