Effect of thermal treatment on structure and leakage current of Na0.5Bi0.5TiO3 thin films
Journal Title: Journal of Physics and Electronics - Year 2018, Vol 26, Issue 1
Abstract
Na0.5Bi0.5TiO thin films were grown on heated to 200°С Pt/TiO2/SiO2/Si substrates by ex-situ method with high-frequency (13.56 MHz) magnetron deposition. Thermal treatment of the films was carried out at 650°С, 700°С and 800°С. X-ray diffraction investigations showed the films were poly-crystalline and contained additional phase. In the films annealed at 700°C two dominating conduction mechanisms were observed: ohmic at the fields Е < 8 kV/cm and Schottky emission in the field range of 30 – 70 kV/cm. It is also observed that the increase of the film annealing temperature to 800°С leads to the increase of leakage currents. It is assumed that high values of the leakage currents were attributed to the presence of both structure defects and additional unknown phase.
Authors and Affiliations
T. V. Kruzina, S. A. Popov, Yu. N. Potapovich, A. S. Rutskyi
Keywords
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- EP ID EP540636
- DOI 10.15421/331808
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