Electric and photoelectric properties of solid solutions Ag2In2Si(Ge)Se6
Journal Title: Фізика і хімія твердого тіла - Year 2016, Vol 17, Issue 2
Abstract
Temperature depen-dences of specific dark conductivity and spectral distributions ofphotoconductivity have been studied. It has been established thatthe Ag<sub>2</sub>In<sub>2</sub>SiSe<sub>6</sub> and Ag<sub>2</sub>In<sub>2</sub>GeSe<sub>6</sub> single crystals are highresistancesemiconductors withp-type conductivity. The interpretation of experimental results conducted under the Mott model for disordered systems. Thus, from the experimental results follows that the solid solution AgInSe<sub>2</sub>-Si(Ge)Se<sub>2</sub> when the temperature drops from 300 to 200 K, the conductivity in the area carried thermo excited permitted carriers impurity activation energy of ~ 0.59eV and 0.48eV for Ag<sub>2</sub>In<sub>2</sub>SiSe<sub>6</sub> and Ag<sub>2</sub>In<sub>2</sub>GeSe<sub>6</sub> respectively.
Authors and Affiliations
O. V. Zamuruieva, G. L. Myronchuk, M. V. Khvyshchun
Keywords
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- EP ID EP255149
- DOI 10.15330/pcss.17.2.202-206
- Views 44
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