ENERGY SPECTRA OF STRONGLY LIGERIZED SEMICONDUCTORS AND SEMICONDUCTOR COMPOUNDS
Journal Title: International scientific journal Science and Innovation - Year 2024, Vol 3, Issue 4
Abstract
In this work, the temperature dependence of discrete energy states in the silicon band gap was analyzed using a mathematical model of the band gap width of semiconductors depending on the alloying level and the density of states spectrum.
Authors and Affiliations
Ibragimova Nilufarkhan Ganijon kizi
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