Etching of Metallic & Dielectric Films in VLSI Technology
Journal Title: International Journal of Advanced Research in Computer Engineering & Technology(IJARCET) - Year 2012, Vol 1, Issue 4
Abstract
In the present paper we discuss the isotropic etching of various films such as Aluminum, Titanium, Silicon dioxide& Silicon Nitride The second section of this paper contains anisotropic etching of Silicon using Silicon Nitride as a mask. Various types of etchant are available.The etch rate depends upon the pH, concentration and temperature in anisotropic etching. In isotropic etching etch rate depends upon concentration of the acidic medium.
Authors and Affiliations
Rajeev Kumar , Mandeep Singh Saini , Dr. Mukesh Kumar
Keywords
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- EP ID EP157042
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