F4-TCNQ Concentration Dependent Capacitance-Voltage (C-V) and Conductivity-Voltage (G/w-V) Characteristics of the Au/P3HT:F4-TCNQ/N-Si (MPS) Schottky Barrier Diodes
Journal Title: International Journal of Engineering and Science Invention - Year 2018, Vol 7, Issue 7
Abstract
In this work, the electrical properties of Au/P3HT:F4-TCNQ/n-Si metal-polymer-semiconductor (MPS) Schottky barrier diodes (SBDs) with the F4-TCNQ concentration values of 0.5% and 2%were investigated by capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The series resistance (Rs) and interface states (Nss) were calculated from C-V and G/w-V measurements as a function of F4-TCNQ concentration. The preferable electrical results, such as lower capacitance, lower series resistance, higher shunt resistance and lower Nss, were obtained for 2% F4-TCNQ concentration used diode. For this reason, the deeperC-V and G/w-V analysis were performed only for 2% F4-TCNQ concentration used diode. By using C and G/w measurements, diffusion potential (VD), doping concentration of donors (ND), depletion layer width (WD), barrier height (ɸB), Fermi energy level (EF), maximum electric field (Em) and Schottky barrier lowering (ΔɸB) were obtained for 2% F4-TCNQ concentration used Au/P3HT:F4-TCNQ/n-Si SBD. The results show that the series resistance and interface states decreased with increasing the frequency. Finally, it can be concluded that the concentration of F4-TCNQ has a great effect on the electrical properties of the Au/P3HT:F4- TCNQ/n-Si SBDs. Additionally,the values of Rs and Nss directly affected the C-V and the G/w-V profiles of Au/P3HT:F4-TCNQ/n-Si SBDs.
Authors and Affiliations
Aslıhan Çimen, Hüseyin Muzaffer Şağban, Tuğba Özdemir, Özge Tüzün Özmen
Keywords
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