FEATURES OF THE FORMATION OF SCHOTTKY FIELD TRANSISTORS WITH A SELF-CONDENSED GATE ON THE BASIS OF NITRIDE AND TUNGSTEN SILICIDE
Journal Title: Международный научный журнал "Интернаука" - Year 2018, Vol 1, Issue 2
Abstract
In this paper, the peculiarities of the technological processes of the formation of Schottky field transistors by arsenidgale technology are considered. Namely the technology of formation of Schottky field transistors with a self-locking gate on the basis of nitride and tungsten silicide.
Authors and Affiliations
Stepan Novosjadly, Nasar Humemjuk
Keywords
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