FTL Algorithm using Warm Block Technique for QLC+SLC Hybrid NAND Flash Memory
Journal Title: International Journal of Advanced Computer Science & Applications - Year 2018, Vol 9, Issue 12
Abstract
When applying the existing flash translation layer technique to a mixed NAND flash storage device composed of Quad Level Cell and Single Level Cell, because the characteristics of a semiconductor chip are not taken into consideration, the data are stored indiscriminately, and thus the performance and stability are not guaranteed. Therefore, this study proposes a flash translation layer algorithm using the warm block technique in a NAND flash storage device that combines a large capacity Quad Level Cell and a high performance Single Level Cell. The warm block technique avoids overloading of the read/write/erase operations in the Quad Level Cell flash memory by efficiently placing hot data that are frequently updated on a long-living Single Level Cell. It was confirmed experimentally that the lifetime extension and performance of hybrid NAND flash memory are improved using the warm block technique.
Authors and Affiliations
Wanil Kim, Seok-Bin Seo, Jin Young Kim, Se Jin Kwon
Keywords
Related Articles
- EP ID EP429141
- DOI 10.14569/IJACSA.2018.091220
- Views 100
- Downloads 0
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