High Performance AlGaN Metal-Semiconductor-Metal Ultraviolet Photo Detectors

Abstract

In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that was modeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has very low dark current, with the applied bias below 1 V, the dark current was below 16 pA and the peak responsivity of 0.07A/W was achieved at 308nm. We have performed a comparison between our modeling and the experimental results.

Authors and Affiliations

S. Benzeghda

Keywords

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  • EP ID EP158945
  • DOI -
  • Views 74
  • Downloads 0

How To Cite

S. Benzeghda (30). High Performance AlGaN Metal-Semiconductor-Metal Ultraviolet Photo Detectors. International Journal of Engineering Sciences & Research Technology, 2(11), 3333-3336. https://europub.co.uk/articles/-A-158945