HIGH RATE DEPOSITION OF THIN FILM COMPOUNDS – MODELING OF REACTIVE MAGNETRON SPUTTERING PROCESS
Journal Title: Proceedings of Electrotechnical Institute Prace Instytutu Elektrotechniki - Year 2013, Vol 60, Issue 263
Abstract
Deposition of compound thin films with reactive magnetron sputtering method causes a lot of difficulties, of which the main ones are the instability of the process and decrease of the deposition rate. Computer simulations were performed using Berg’s model assumptions. Firstly, effect of basic process parameters on aluminum oxide deposition was examined, also theoretical characteristics of the deposition of Al[sub]2[/sub]O[sub]3[/sub], AlN, TiO[sub]2[/sub], TiN were compared. Next, the parameters for efficient deposition of titanium oxide were determined. Simulations were confirmed by the results of experimental work. The purpose of presented work was to define, with Berg’s model, mechanisms which enable deposition, in metallic mode of magnetron work, of oxides with properties near to stochiometric. Presented analysis results were compared to real process parameters observed during reactive sputtering . <br/><br/>
Authors and Affiliations
Katarzyna Tadaszak, Jarosław Paprocki
Keywords
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