Hole Transportation in Photocells Based on Hydrogenated Amorphous Silicon

Abstract

In this manuscript, amorphous hydrogenated silicon films were studied by using the photo CVC vidicon target characteristics. In the photo CVC characteristic, a region is observed that obeys the quadratic law. It is explained that the changes contribution in the a Si H dielectric constant and the hole lifetime depending on the applied voltage for obtaining information from this section about the hole transportation mechanism is too significant. Zaynobidinov Sirojidin Zaynobidinovich | Babahodjayev Umar Samsakhodjayevich | Nabiyev A"-™zamjon Botirjonovich | Usmanov Muhammadjon Abduhalil o"-™g"-™li "Hole Transportation in Photocells Based on Hydrogenated Amorphous Silicon" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Special Issue | Modern Trends in Scientific Research and Development, Case of Asia , October 2020, URL: https://www.ijtsrd.com/papers/ijtsrd35835.pdf Paper Url :https://www.ijtsrd.com/other-scientific-research-area/other/35835/hole-transportation-in-photocells-based-on-hydrogenated-amorphous-silicon/zaynobidinov-sirojidin-zaynobidinovich

Authors and Affiliations

Zaynobidinov Sirojidin Zaynobidinovich | Babahodjayev Umar Samsakhodjayevich | Nabiyev A"-™zamjon Botirjonovich | Usmanov Muhammadjon Abduhalil o"-™g"-™li

Keywords

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  • EP ID EP690977
  • DOI -
  • Views 118
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How To Cite

Zaynobidinov Sirojidin Zaynobidinovich, Babahodjayev Umar Samsakhodjayevich, Nabiyev A"-™zamjon Botirjonovich (2020). Hole Transportation in Photocells Based on Hydrogenated Amorphous Silicon. International Journal of Trend in Scientific Research and Development, 4(6), -. https://europub.co.uk/articles/-A-690977