Impedance models of double well structures
Journal Title: Вісник НТУУ КПІ. Серія Радіотехніка, Радіоапаратобудування - Year 2015, Vol 0, Issue 60
Abstract
Introduction. In this paper the impedance models double well structures (DWS) which is based on δ-inhomogeneities and rectangular potential are developed. The models of double well potential which is based on δ-functions and rectangular depending allow to obtain analytical solutions and to investigate important features of DWS. Analogy of double well structure and coupled oscillatory circuits. The analogy of DWS and coupled oscillatory circuits are considered. It is presented comparison the Schrödinger equation for the wave function and the equation for the current circuit without loss. It is shown that DWS as the system with two states performs the function of logical operations similar bits in classical computer. Models based on the impedance δ-inhomogeneities. Two models of DWS based on the impedance δ-inhomogeneities: δ-barrier in the potential well and two δ-wells are developed. The analytical expressions for input impedance and eigenvalues are received and investigated. It is shown that characteristics of DWS with finite size and δ-inhomogeneities agree well. Eigenvalues of asymmetric double well structure. The most general case of asymmetric DWS with a rectangular potential is considered. The eigenvalues of such a structure on the basis of a generalized model of barrier structures are found. Dependences of eigenvalues of symmetric and asymmetric DWS are presented. Conclusions. Impedance models allow to obtain the analytical solutions with substantial generalization problems in comparison with known traditionally solved problems. By analysis of input impedance characteristics conditions for the eigenvalues DWS placed between environments with different wave impedance are received.
Authors and Affiliations
M. Gindikina, Yu. Adamenko, E. Nelin
Keywords
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- EP ID EP308771
- DOI 10.20535/RADAP.2015.60.131-140
- Views 89
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