Influence of electron - phonon interaction on piezoresistance of single crystals n-Ge
Journal Title: JOURNAL OF ADVANCES IN PHYSICS - Year 0, Vol 7, Issue 3
Abstract
Piezoresistance of uniaxially deformed along the crystallographic direction [100] single crystals n-Ge< for different fixed temperatures has been investigated. Presence of the significant piezoresistance for given conditions of the experiment is explained by increase in the effective mass and decrease in the relaxation time for electrons at the expense of the inversion of (L1-†1) type of an absolute minimum in n-Ge. Temperature dependencies of resistivity for undeformed (L1model of conduction band) and deformed under uniaxial pressureP=3 GPа (∆1model of conduction band) single crystals n-Ge are obtained. Resistivity for undeformed single crystals n-Ge is changed according to the law Ï~T1.66. Resistivity for uniaxially deformed single crystals n-Ge is changed as Ï~T 1.53. The given dependencies show that for L1 model of the conduction band in contrast to ˆ†1model one must equally with intravalley scattering of electrons on acoustic phonons take into account scattering of electrons on optical and intervalley phonons. Therefore reduction of the magnitude piezoresistance n-Ge with the increasing temperature is associated with turning-off at the expense of the inversion of (L1-Δ1) type of absolute minimum under uniaxial pressure P>2.7 GPа mechanism for scattering of electrons on intervalley and optical phonons. Comparison of results of theoretical calculations with relevant experimental data shows that peculiarities of piezoresistance n-Ge under uniaxial pressures 1.6<P<2.7 GPа for (L1-Δ1) model of conduction band n-Ge can be described only taking into account nonequivalent intervalley scattering of electrons between the minima L1 andΔ1. /em>
Authors and Affiliations
sergiy luniov, Olexandr Burban, Petro Nazarchuk, Andriy Zimych
Keywords
Related Articles
- EP ID EP653794
- DOI 10.24297/jap.v7i3.1589
- Views 81
- Downloads 0
Ab-initio Calculations of Electronic, Transport, and Bulk Properties of cubic Boron Nitride (zb-BN)
We present results from ab-initio, self consistent, local density approximation (LDA) calculations of electronic and related properties of cubic boron nitride (zb-BN). We employed the Ceperley and Alder LDA potenti...
The properties of Bessel-type fractional derivatives and integrals
The fractional integrals of Bessel-type Fractional Integrals from left-sided and right-sided integrals of fractional order is established on finite and infinite interval of the real-line, half axis and real axis. The Bes...
A Novel Approach To Prevent Damage from Earthquakes and Tsunamis With The Utilization of a Proportional Surface Pyramidal Structure and Modified Underground Two-Part Hexagonal Damping Rubber Bearing Base Isolator
Today, increased tectonic plate activity in the Cascadia Megathrust Subduction Zone, located on the Pacific American Coast, has the potential to cause a massive earthquake with a magnitude upwards of 9.0 on the Richter s...
Influence of Alloying Additives on The Adhesive Properties of Steels: Atomic Level Simulation
In the present work we report atomistic molecular dynamics simulation results on adhesion force between self-mated iron/iron, iron/vanadium, iron-cementite and iron/titanium surfaces has been determined and we found that...
LOW PRESSURE CH2Cl2 PLASMA DISCHARGE
Glow discharge of dichloromethane (DCM) was investigated employing Optical Emission Spectroscopy (OES), while the electron temperature and electron density were measured using a double Langmuir probe. Deposits formed wer...